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Hence, the small detectable deviations in displacement are determined by noise and no indication of misfit-dislocations could be detected. However, checking the significance of the result by repeating the same procedure for rows of spots at much larger distance (between the 10th and 11th Cu layer) from the interface, indicated that the same small variations of displacement were obtained. The “periodic” variations of displacement of the bright spots between the first and second Cu layer in the experimental image showed variations of displacement with respect to an assumed straight interface plane with the correct magnitude. This was checked and indeed turned out to be the case. Detection of these small variations in experimental images seems impossible. These variations are quite small despite the relatively strong interaction across the interface assumed in the simulation by taking α = 2. Image simulation predicted for the bright spots between the first and second Cu layer maximum variations of displacement perpendicular to the interface were of the order of 0.003 nm. Periodic variations of displacement of spots perpendicular to the interface were assumed possible, because in this direction the distance between spots is much larger, 0.209 nm.
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The small spacing of 0.128 nm between spots along the interface certainly does not allow determination of periodic variations of spot separation along the interface. Furthermore, displacements of dark or bright spots on or between the atomic columns of Cu at the interface, indicating the presence of misfit-dislocations, could not be observed. 18), analogous to the observations for Cu/MgO〈112〉, could not be detected. Kooi, in Handbook of Surfaces and Interfaces of Materials, 2001 Cu/MnO Along 〈112〉īrightness/contrast variations at the Cu/MnO interface when viewed along the 〈112〉 direction ( Fig. This suggests that the solution method is promising, but so far this is the only example of an efficient OLED deposited from the solution. However, in 2019, an article was published, in which the authors created a solution-based OLED with having a record high brightness of 6365 cd/m 2 and efficiency EQE = 7.15%, which is brighter than all known diodes, including those made by vacuum thermal evaporation. So, for example, diodes obtained by the spin-coating method based on the non-volatile carboxylates, and, exhibit maximum brightnesses of only 75, 180, and 230 cd/m 2, respectively. With the transition to solution technology, again, the typical values of brightness and efficiency of OLEDs are reduced by orders of magnitude. Key: DPM, 2,2,6,6-tetramethyl-3,5-heptanedione pobz, phenoxybenzoate PO4, di(phosphine oxide). ITO/PEDOT:PSS/Poly-TPD/TCTA:OXD-7: Tb7/Tm3PyPB/LiF/Al ITO/MoO 3/TCTA:MoO 3/TcTa/ Tb3/ Tb2/3TPYMB/LiF/Al These transferred and bonded LEDs can operate at higher current densities and have larger die sizes. Sapphire has poor thermal and electrical conductivity increased brightness is achieved by transferring the GaN epitaxial material to a conductive substrate that also incorporates a reflector to increase light output. The highest brightness LEDs are manufactured with a sapphire substrate removal process. SiC has also been successfully used (primarily by Cree) but has higher cost and limited availability of 6-in. Sapphire is the preferred substrate for growing LEDs although silicon offers lower cost and is available in large diameters, comparable device performance has not yet been achieved.
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High brightness LEDs based on short-wavelength nitride emitters have transformed the lighting industry over the past decade, offering substantial efficiency improvements and enhanced performance in displays, general lighting and automotive applications. Patrick Fay, in Semiconductors and Semimetals, 2019 1.1 Improved light extraction and thermal management for high-brightness LEDs